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| ZXMP6A13G 60V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -60V: RDS(on) = 0.390 : ID = -2.3A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT223 FEATURES * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * SOT223 package APPLICATIONS * DC-DC converters * Power management functions * Relay and solenoid driving * Motor control PINOUT ORDERING INFORMATION DEVICE ZXMP6A13GTA ZXMP6A13GTC REEL SIZE 7" 13" TAPE WIDTH 12mm 12mm QUANTITY PER REEL 1000 units 4000 units DEVICE MARKING * ZXMP 6A13 Top View ISSUE 2 - JULY 2004 1 ZXMP6A13G ABSOLUTE MAXIMUM RATING PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (V GS = -10V; (V GS = -10V; (V GS = -10V; T A =25C) Pulsed Drain Current (c) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Power Dissipation at T A =25C Linear Derating Factor (a) (c) (b) SYMBOL V DSS V GS T A =25C) (b) T A =70C) (b) (a) ID LIMIT -60 20 -2.3 -1.9 -1.7 -7.8 -4.1 -7.8 2.0 16 3.9 31 -55 to +150 UNIT V V A I DM IS I SM PD PD T j :T stg A A A W mW/C W mW/C C Power Dissipation at T A =25C (b) Linear Derating Factor Operating and Storage Temperature Range THERMAL RESISTANCE PARAMETER Junction to Ambient Junction to Ambient NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature. (a) (b) SYMBOL R JA R JA VALUE 62.5 32.2 UNIT C/W C/W ISSUE 2 - JULY 2004 2 ZXMP6A13G CHARACTERISTICS ISSUE 2 - JULY 2004 3 ZXMP6A13G ELECTRICAL CHARACTERISTICS (at TA = 25C unless otherwise stated) PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) (3) (1) SYMBOL MIN. TYP. MAX. UNIT CONDITIONS V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs -60 -1 100 -1.0 0.390 0.595 1.8 V A nA V I D =-250A, V GS =0V V DS =-60V, V GS =0V V GS = 20V, V DS =0V I =-250 A, V DS = V GS D V GS =-10V, I D =-0.9A V GS =-4.5V, I D =-0.8A S V DS =-15V,I D =-0.9A C iss C oss C rss 233 17.4 9.6 pF pF pF V DS =-30V, V GS =0V, f=1MHz Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge NOTES: (1) Measured under pulsed conditions. Width (3) t d(on) tr t d(off) tf Qg Qg Q gs Q gd 1.6 2.3 13 5.8 2.4 5.1 0.7 0.7 ns ns ns ns nC nC nC nC V DS =-30V,V GS =-10V, I D =-0.9A V DS =-30V,V GS =-5V, I D =-0.9A V DD =-30V, I D =-1A R G 6.0 , V GS =-10V V SD t rr Q rr -0.85 22.6 23.2 -0.95 V ns nC T J =25 C, I S =-0.8A, V GS =0V T J =25 C, I F =-0.9A, di/dt= 100A/ s 300 s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 2 - JULY 2004 4 ZXMP6A13G TYPICAL CHARACTERISTICS ISSUE 2 - JULY 2004 5 ZXMP6A13G TYPICAL CHARACTERISTICS ISSUE 2 - JULY 2004 6 ZXMP6A13G PACKAGE OUTLINE PAD LAYOUT DETAILS PACKAGE DIMENSIONS Millimeters DIM Min A A1 b b2 C D 0.02 0.66 2.90 0.23 6.30 Max 1.80 0.10 0.84 3.10 0.33 6.70 Min 0.0008 0.026 0.114 0.009 0.248 Max 0.071 0.004 0.033 0.122 0.013 0.264 e e1 E E1 L Inches DIM Min Max Min Max 2.30 BSC 4.60 BSC 6.70 3.30 0.90 7.30 3.70 0.0905 BSC 0.181 BSC 0.264 0.130 0.355 0.287 0.146 Millimeters Inches (c) Zetex Semiconductors plc 2004 Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - JULY 2004 7 |
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